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Femtosecond luminescence spectroscopy of core states in silicon nanocrystals

Lookup NU author(s): Professor Lidija Siller, Dr Ben Horrocks

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Abstract

We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation. (C) 2010 Optical Society of America


Publication metadata

Author(s): Zidek K, Trojanek F, Maly P, Ondic L, Pelant I, Dohnalova K, Siller L, Little R, Horrocks BR

Publication type: Article

Publication status: Published

Journal: Optics Express

Year: 2010

Volume: 18

Issue: 24

Pages: 25241-25249

Print publication date: 01/11/2010

ISSN (print):

ISSN (electronic): 1094-4087

Publisher: Optical Society of America


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