Growth of few layers graphene on silicon carbide from nickel silicide supersaturated with carbon

Vassilevski, K; Nikitina, I; Horsfall, A; Wright, N; Johnson, C

doi:10.4028/www.scientific.net/MSF.645-648.589

Growth of few layers graphene on silicon carbide from nickel silicide supersaturated with carbon

Lookup NU author(s): Dr Konstantin Vasilevskiy ORCiD, Irina Nikitina, Dr Alton Horsfall, Professor Nick Wright, Dr Christopher Johnson

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Abstract

Few Layers Graphene (FLG) films were grown on the carbon-terminated surface of 4H-SiC from nickel silicide supersaturated with carbon. The process was realised by annealing of thin Ni films deposited on silicon carbide followed by wet processing to remove the nickel silicide. To identify and characterize the fabricated FLG films, micro-Raman scattering spectroscopy, AFM and optical microscopy have been used. The films grown on samples with initially deposited nickel thinner than 20 nm show clear graphene footprints in micro-Raman scattering spectra, namely a single component, Lorentzian shape 2D band with FWHM remarkably lower than that of the 2D peak of graphite. © (2010) Trans Tech Publications.