Lookup NU author(s): Dr Hua Khee Chan,
Professor Nick Wright,
Dr Alton Horsfall,
Dr Alicia Barnett
This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).
Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20 °C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2 × 2 or 1 × 3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm2 at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution (FWHM at 17.4 keV, Mo Kα) varied from 1.36 keV to 1.68 keV among different diodes.
Author(s): Lioliou G, Chan HK, Gohil T, Vassilevski KV, Wright NG, Horsfall AB, Barnett AM
Publication type: Article
Publication status: Published
Journal: Nuclear Instruments and Methods in Physics Research A
Print publication date: 21/12/2016
Online publication date: 05/10/2016
Acceptance date: 01/10/2016
ISSN (print): 0168-9002
ISSN (electronic): 1872-9576
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