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Electrical stability impact of gate oxide in channel implanted SiC NMOS and PMOS transistors

Lookup NU author(s): Idzdihar Idris, Dr Ming-Hung Weng, Dr Hua Khee Chan, Professor Nick Wright, Dr Alton Horsfall

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Publication metadata

Author(s): Idris MI, Weng MH, Chan H-K, Murphy AE, Smith DA, Young RAR, Ramsay EP, Clark DT, Wright NG, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016)

Year of Conference: 2017

Pages: 513-516

Online publication date: 01/05/2017

Acceptance date: 02/04/2016

ISSN: 1662-9752

Publisher: Trans Tech Publications Ltd

URL: https://doi.org/10.4028/www.scientific.net/MSF.897.513

DOI: 10.4028/www.scientific.net/MSF.897.513

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783035710434


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