Toggle Main Menu Toggle Search


Electrical stability impact of gate oxide in channel implanted SiC NMOS and PMOS transistors

Lookup NU author(s): Idzdihar Idris, Dr Ming-Hung Weng, Dr Hua Khee Chan, Professor Nick Wright, Dr Alton Horsfall


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Publication metadata

Author(s): Idris MI, Weng MH, Chan H-K, Murphy AE, Smith DA, Young RAR, Ramsay EP, Clark DT, Wright NG, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016)

Year of Conference: 2017

Pages: 513-516

Online publication date: 01/05/2017

Acceptance date: 02/04/2016

ISSN: 1662-9752

Publisher: Trans Tech Publications Ltd


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783035710434


    Link to this publication