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Benefits of high-k dielectrics in 4H-SiC trench MOSFETs

Lookup NU author(s): Professor Nick Wright, Nipapan Poolamai, Dr Konstantin Vasilevskiy, Dr Alton Horsfall, Dr Christopher Johnson

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Publication metadata

Author(s): Wright NG, Poolamai N, Vassilevski KV, Horsfall AB, Johnson CM

Publication type: Article

Journal: Materials Science Forum

Year: 2004

Volume: 457-460

Pages: 1433-1436

Print publication date: 01/01/2004

ISSN (print): 0255-5476

ISSN (electronic): 1422-6375

Publisher: Trans Tech Publications Ltd

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.457-460.1433

DOI: 10.4028/www.scientific.net/MSF.457-460.1433


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