Toggle Main Menu Toggle Search

ePrints

Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors

Lookup NU author(s): Dr Sarah Olsen, Professor Anthony O'Neill, Dr Piotr Dobrosz, Professor Steve Bull, Luke Driscoll, Dr Sanatan Chattopadhyay, Dr Kelvin Kwa

Downloads


Publication metadata

Author(s): Olsen SH, O'Neill AG, Dobrosz P, Bull SJ, Driscoll LS, Chattopadhyay S, Kwa KSK

Publication type: Article

Journal: Journal of Applied Physics

Year: 2005

Volume: 97

Issue: 11

Pages: 1-9

Print publication date: 01/01/2005

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.1922582

DOI: 10.1063/1.1922582


Altmetrics

Altmetrics provided by Altmetric


Actions

    Link to this publication


Share