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Gate leakage mechanisms in strained Si devices

Lookup NU author(s): Liang Yan, Dr Sarah Olsen, Dr Mehdi Kanoun, Professor Anthony O'Neill

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Author(s): Yan L, Olsen SH, Kanoun M, Agaiby R, O'Neill AG

Publication type: Article

Journal: Journal of Applied Physics

Year: 2006

Volume: 100

Issue: 10

ISSN (print): 0021-8979

ISSN (electronic): 1520-8850

Publisher: American Institute of Physics

URL: http://dx.doi.org/10.1063/1.2374191

DOI: 10.1063/1.2374191

Notes: Article no. 104507 6 pages


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