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Lookup NU author(s): Dr Ming-Hung Weng, Dr Alton Horsfall, Dr Rajat Mahapatra
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This paper reports the first observation of gas sensing using the leakage current through a capacitor fabricated on Silicon Carbide (SiC). The dielectric layer used in this sensor has a Titanium Dioxide layer in addition to the thermally grown Silicon Dioxide (SiO2) and this operates as an adhesion promoting layer to the catalytic metal gate contact. We have shown that the leakage current through this Pd/TiO2/SiO2/SiC capacitor structure is controlled by a trap assisted tunneling mechanism, using a single barrier height and trap density. This barrier height is lowered in the presence of hydrogen gas at high temperatures, whilst the trap density in the dielectric remains unchanged. This shows that the formation of a charge dipole layer under the contact is responsible for the observed change in characteristics in the hydrogen environment, rather than a change to the bulk properties of the dielectric layer. Further, we show that this technique is not affected by the influence of interface traps, which dominate the low voltage capacitance characteristics at high temperatures, offering the opportunity for a simple, more rugged detection method) © 2006 IEEE.
Author(s): Weng M-H, Horsfall A, Mahapatra R, Wright N
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Proceedings of IEEE Sensors
Year of Conference: 2006
Pages: 77-80
ISSN: 1930-0395
Publisher: IEEE
URL: http://dx.doi.org/10.1109/ICSENS.2007.355722
DOI: 10.1109/ICSENS.2007.355722
Library holdings: Search Newcastle University Library for this item
ISBN: 1424403766
