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Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Lookup NU author(s): Goutan Dalapati, Dr Sanatan Chattopadhyay, Dr Kelvin Kwa, Dr Sarah Olsen, Dr Yuk Tsang, Rimoon Agaiby, Professor Anthony O'Neill, Dr Piotr Dobrosz, Professor Steve Bull

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Author(s): Dalapati GK, Chattopadhyay S, Kwa KSK, Olsen SH, Tsang YL, Agaiby R, O'Neill AG, Dobrosz P, Bull SJ

Publication type: Article

Journal: IEEE Transactions on Electron Devices

Year: 2006

Volume: 53

Issue: 5

Pages: 1142-1152

ISSN (print): 0018-9383

ISSN (electronic): 1557-9646

Publisher: IEEE

URL: http://dx.doi.org/10.1109/TED.2006.872086

DOI: 10.1109/TED.2006.872086


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