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Impact of Ge content on the gate oxide reliability of strained-Si/SiGe MOS devices

Lookup NU author(s): Dr Suresh Uppal, Dr Mehdi Kanoun, John Varzgar, Dr Sanatan Chattopadhyay, Dr Sarah Olsen, Professor Anthony O'Neill

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Author(s): Uppal S, Kanoun M, Varzgar JB, Chattopadhyay S, Olsen S, O'Neill A

Publication type: Article

Journal: Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Year: 2006

Volume: 135

Issue: 3

Pages: 207-209

ISSN (print): 0921-5107

ISSN (electronic): 1873-4944

Publisher: Elsevier SA

URL: http://dx.doi.org/10.1016/j.mseb.2006.08.006

DOI: 10.1016/j.mseb.2006.08.006

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