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Leakage current and charge trapping behavior in Ti O2 Si O2 high- κ gate dielectric stack on 4H-SiC substrate

Lookup NU author(s): Dr Rajat Mahapatra, Nipapan Poolamai, Dr Alton Horsfall, Dr Sanatan Chattopadhyay, Professor Nick Wright

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Publication metadata

Author(s): Mahapatra R, Chakraborty AK, Poolamai N, Horsfall A, Chattopadhyay S, Wright NG, Coleman KS, Coleman PG, Burrows CP

Publication type: Article

Journal: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Year: 2007

Volume: 25

Issue: 1

Pages: 217-223

ISSN (print): 1071-1023

ISSN (electronic): 1520-8567

Publisher: American Institute of Physics

URL: http://dx.org/10.1116/1.2433976

DOI: 10.1116/1.2433976


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