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SiGe HMOSFET differential pair

Lookup NU author(s): Stephen Badcock, Professor Anthony O'Neill

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Abstract

A SiGe HMOSFET can be engineered to provide enhanced linearity in its output current-voltage characteristics. The additional linearity can he exploited in the design of more linear analogue circuits like the differential pair presented here. From the TCAD data of such a structure, the BSIM3v3 model of the transistor was extracted and simulation results were obtained for the performance of a differential pair. At the specified power of 1.25 mW the input range of the SiGe differential pair at which the percent nonlinearity is below 1%, is roughly twice that of its Si counterpart. Additionally the SiGe circuit is more power efficient since an increase of the power consumption from 1 mW to 1.25 mW accounts for an improvement of about 40% in its input range, as compared to only 10% for Si. (13 References).


Publication metadata

Author(s): Badcock SG; O'Neill AG; Michelakis K; Despotopoulos S; Papavassiliou C; Toumazou C

Publication type: Conference Proceedings (inc. Abstract)

Conference Name: IEEE International Symposium on Circuits and Systems

Year of Conference: 2001

Pages: 679-682

Publisher: IEEE

URL: http://dx.doi.org/10.1109/ISCAS.2001.921947

DOI: 10.1109/ISCAS.2001.921947

Library holdings: Search Newcastle University Library for this item

ISBN: 0780366859


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